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John Rozen, Ph.D.
Former Research Associate

Research Group: Materials Physics
Department:  Physics and Astronomy
Program: Materials Science

Office: Stevenson Science Center
Phone: xxx
Fax: xxx
Email: john.rozen@alumni.vanderbilt.edu

My Resume         My CV

Currently at

IBM T. J. Watson Research Center - New York -
Research Scientist

Phone: xxx
Web: T.J. Watson

Previously at

The Central Research Institute of the Electric Power Industry - Japan -
Collaborating Researcher

Phone: xxx
Web: CRIEPI

Degrees


One of the most famous photos in the history of physics captures the illustrious participants at the fifth Solvay Conference in Brussels, October 1927. Twenty-nine physicists, the main quantum theorists of the day, came together to discuss the topic ´┐ŻElectrons and Photons´┐Ż. Seventeen of the 29 attendees were or became Nobel Prize winners.

Current Research

  • Alternate gate dielectrics for Si CMOS technology.
  • Electrical properties of silicon carbide (SiC) interfaces. Overview.
  • Electrical and optical properties of vanadium dioxide (VO2) thin films. Overview.

Ph.D. Dissertation


Electronic properties and reliability of the SiO2/SiC interface
  • Vanderbilt University, May 2008
    Download PDF       ©John Rozen

Book Chapter


Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond by J. Rozen

In "Physics and Technology of Silicon Carbide Devices", book edited by Yasuto Hijikata, Oct. 2012

INTECH open access publications
Free Access       ©John Rozen

Publications

Highlight: SiC special topic issue.

  • J. Rozen, M. Nagano, and H. Tsuchida,

    Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface.
    J. Mater. Res. 28, 28 (2013).

    Available online       ©Materials Research Society


Silicon carbide gate oxide and interface properties.

  • J. A. Taillon, J. H. Yang, C. A. Ahyi, J. Rozen, J. R. William, L. C. Feldman, T. S. Zheleva, A. J. Lelis, and L. G. Salamanca-Riba, Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors.
    J. Appl. Phys. 113, 044517 (2013).
    Available online       ©American Institute of Physics
  • J. Rozen, M. Nagano, and H. Tsuchida, Improved deposited oxide interfaces from N2 conditioning of bare SiC surfaces. Mater. Sci. Forums 717, 729 (2012).
    Available online       ©Trans Tech Publications
  • Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen,S. T. Pantelides, X. Zhu, L. C. Feldman, J. Rozen, and J. R. Williams, Phosphorus passivation of the SiO2/4H-SiC interface.
    Solid-State Electron. 68, 103 (2012).
    Available online       ©Elsevier
  • Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen,S. T. Pantelides, X. Zhu, J. Rozen, L. C. Feldman, J. R. Williams, Y. Xu, and E. Garfunkel, The effects of phosphorus at the SiO2/4H-SiC interface.
    Mater. Sci. Forums 717, 743 (2012).
    Available online       ©Trans Tech Publications
  • J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams and L. C. Feldman, Scaling between channel mobility and interface state density in SiC MOSFETs.   IEEE Trans. Electron Dev. 58, 3808 (2011).
    Download PDF       ©IEEE
  • A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman and P. M. Mooney, Capacitance-voltage and deep-level transient spectroscopy characterization of defects near SiO2/SiC interfaces.
    J. Appl. Phys. 109, 064514 (2011).
    Available online       ©American Institute of Physics
  • X. Zhu, A. C. Ahyi, M. Li, Z. Chen, J. Rozen, L. C. Feldman and J. R. Williams, The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices.  
    Solid State Electron. 57, 76 (2011).
    Available online      ©Elsevier
  • A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Passivation of deep levels at the SiO2/SiC interface.   ECS Trans. 28, 95 (2010).
    Available online      ©The Electrochemical Society
  • J. Rozen, X. Zhu, A. C. Ahyi, J. R. Williams and L. C. Feldman, The limits of post oxidation annealing in NO.   Mater. Sci. Forums 645-648, 693 (2010).
    Available online      ©Trans Tech Publications
  • A. F. Basile, J. Rozen, X. D. Chen, S. Dhar, J. R. Williams, L. C. Feldman and P. M. Mooney, Effect of NO annealing on 6H- and 4H-SiC MOS interface states.   Mater. Sci. Forums 645-648, 499 (2010).
    Available online      ©Trans Tech Publications
  • R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, C. X. Zhang, J. Han, S. Dimitrijev, F. Kong, L. C. Feldman, S. T. Pantelides and R. D. Schrimpf, Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides.   IEEE Trans. Nucl. Sci. 56 (6), 3185 (2009).
    Available online      ©IEEE
  • J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams and L. C. Feldman, Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC.  
    J. Appl. Phys. 105, 124506 (2009).
    Download PDF      ©American Institute of Physics
  • J. Rozen, S. Dhar, S. Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams and L. C. Feldman, Impact of nitridation on negative and positive charge buildup in SiC gate oxides.  
    Mater. Sci. Forums 600-603, 803 (2009).
    Available online      ©Trans Tech Publications
  • J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams and L. C. Feldman, Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 / SiC interface.   J. Appl. Phys. 103, 124513 (2008).
    Download PDF      ©American Institute of Physics
  • E. A. Ray, J. Rozen, S. Dhar, J. R. Williams and L. C. Feldman, Pressure dependence of SiO2 growth kinetics and electrical properties on SiC.   J. Appl. Phys. 103, 023522 (2008).
    Download PDF      Erratum      ©American Institute of Physics
  • J. Rozen, S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, J. R. Williams and V. V. Afanas'ev, Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC.   Appl. Phys. Lett. 91, 153503 (2007).
    § Selection of the Virtual Journals in Science and Technology §
    Download PDF      ©American Institute of Physics.
  • S. K. Dixit, S. Dhar, J. Rozen, S. Wang, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, J. R. Williams and L. C. Feldman, Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors.   IEEE Trans. Nucl. Sci. 53 (6), 3687 (2006).
    Download PDF      ©IEEE


Properties of nanocrystalline vanadium dioxide.

  • J. Rozen, R. Lopez, R. F. Haglund and L. C. Feldman, Two-dimensional current percolation in nanocrystalline vanadium dioxide films.   Appl. Phys. Lett. 88 (8), 081902 (2006).
    Download PDF      ©American Institute of Physics.


Nuclear Magnetic Resonance: dynamics in Fullerene
· 2 Ferrocene solvate.

  • J. Rozen, R. Ceolin H. Szwarc and F. Masin, Dynamical model for the C5H5 cycles in the
    C60·2  Fe(C5H5)2 solvate
    , Phys. Rev. B 70, 144206 (2004).
    Download PDF      ©American Physical Society.
  • J. Rozen, R. Ceolin J. L. Tamarit, H. Szwarc and F. Masin, Solid State 13C and 1H NMR Investigations on C60 · 2 ferrocene, AIP Conference Proceedings -- October 20, 2003 -- Volume 685, Issue 1, p. 19.
    Download PDF      ©American Institute of Physics.


Other Research.

  • R. A. Hansel, J. Rozen and D. G. Walker, Transport involving conducting fibers in a non-conducting matrix.   Int. J. Therm. Sci. 49, 1561 (2010).
    Available online      ©Elsevier


These articles can only be read. Any other use requires prior permission of the author and of the publisher.


For more information, please contact John Rozen.

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